(A) BJT (X)
(B) Power MOSFET ()
(C) Schottky diode (X)
(D) Microwave transistor (X)
Answers: Which one is most suitable power device for high frequency (>100 KHz) switching application Power MOSFET.
(A) BJT (X)
(B) Power MOSFET ()
(C) Schottky diode (X)
(D) Microwave transistor (X)
Answers: Which one is most suitable power device for high frequency (>100 KHz) switching application Power MOSFET.
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