(A) IGBT ()
(B) FCT (X)
(C) MCT (X)
(D) GTO (X)
Answers: A modern power semiconductor device that combines the characteristic of BJT and MOSFET is IGBT.
(A) IGBT ()
(B) FCT (X)
(C) MCT (X)
(D) GTO (X)
Answers: A modern power semiconductor device that combines the characteristic of BJT and MOSFET is IGBT.
TodayMCQs